dsf8025se / dsf8025sg 1/8 www.dynexsemi.com replaces march 2000 version, ds4146-5.1 fds4146-6.0 january 2004 applications induction heating a.c. motor drives inverters and choppers welding high frequency rectification ups features double side cooling high surge capability low recovery charge voltage ratings key parameters v rrm 2500v i f(av) 650a i fsm 7500a q r 540 c t rr 5.0 s 2500 2400 2300 2200 2100 2000 dsf8025se25 dsf8025sg25 dsf8025se24 dsf8025sg24 dsf8025se23 dsf8025sg23 dsf8025se22 DSF8025SG22 dsf8025se21 dsf8025sg21 dsf8025se20 dsf8025sg20 conditions v rsm = v rrm + 100v lower voltage grades available. ordering information when ordering, select the required part number shown in the voltage ratings selection table, e.g.: dsf8025se23 for 2300v product in an 'e' outline, dsf8025sg23 for 2300v product in an 'g' outline, note: please use the complete part number when ordering and quote this number in any future correspondance relating to your order. type number repetitive peak reverse voltage v rrm v dsf8025se / dsf8025sg fast recovery diode advance information package outline type code: e package outline type code: g fig. 1 package outlines (see package details for further information)
dsf8025se / dsf8025sg 2/8 www.dynexsemi.com surge ratings conditions max. units 7.5 ka 281 x 10 3 a 2 s i 2 t for fusing i 2 t surge (non-repetitive) forward current i fsm parameter symbol 10ms half sine; with 0% v rrm, t j = 150 o c 6.0 ka 180 x 10 3 a 2 s i 2 t for fusing i 2 t surge (non-repetitive) forward current i fsm 10ms half sine; with 50% v rrm, t j = 150 o c thermal and mechanical data dc conditions max. units o c/w - 0.094 anode dc clamping force 8.0kn with mounting compound thermal resistance - case to heatsink r th(c-h) 0.018 double side - single side thermal resistance - junction to case r th(j-c) single side cooled symbol parameter - 0.036 o c/w o c/w cathode dc - 0.094 o c/w double side cooled - 0.047 o c/w t stg storage temperature range -55 175 o c kn 9.0 7.0 clamping force - t vj virtual junction temperature forward (conducting) - 150 o c min. current ratings symbol parameter conditions double side cooled i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current single side cooled (anode side) i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current units max. half wave resistive load, t case = 65 o c 650 a t case = 65 o c 1020 a t case = 65 o c 785 a half wave resistive load, t case = 65 o c 385 a t case = 65 o c 604 a t case = 65 o c 465 a
dsf8025se / dsf8025sg 3/8 www.dynexsemi.com characteristics t rr 50 symbol typ. units parameter v fm forward voltage i rm peak reverse current reverse recovery time q ra1 recovered charge (50% chord) i rr reverse recovery current k soft factor v to threshold voltage r t slope resistance v frp peak forward recovery voltage di/dt = 1000a/ s, t j = 125 o c70-v at t vj = 150 o c-0.8m ? at t vj = 150 o c - 1.48 v 1.8 - - - 235 a - 540 c -5.0 s at v rrm , t case = 150 o c-ma at 1000a peak, t case = 25 o c-2.3v conditions max. i f = 1000a, di rr /dt = 100a/ s t case = 150 o c, v r = 100v definition of k factor and q ra1 0.5x i rr i rr di r /dt t 1 t 2 q ra1 = 0.5x i rr (t 1 + t 2 ) k = t 1 /t 2
dsf8025se / dsf8025sg 4/8 www.dynexsemi.com 10 100 1000 rate of rise of reverse current di r /dt - (a/ s) 1000 100 10000 reverse recovered charge, q r - ( c) i f = 2000a i f = 1000a i f = 200a conditions: t j = 150?c, v r = 100v 0.5 x i rr i rr q ra1 t p = 1ms i fm di r /dt 0 100 200 300 400 500 instantaneous forward current i f - (a) 1.00 1.25 1.50 1.75 2.00 instantaneous forward voltage v f - (v) measured under pulse conditions t j = 25 ? c t j = 150 ? c 0 50 100 150 200 250 transient forward votage, v fr - (v) 0 500 1000 1500 2000 rate of rise of forward current, di f /dt - (a/s) t j = 125 ? c limit t j = 25 ? c limit current waveform voltage waveform v frp y x di = y dt x curves 500 1000 1500 2000 2500 3000 instantaneous forward current i f - (a) 0 1.0 2.0 3.0 4.0 instantaneous forward voltage v f - (v) measured under pulse conditions t j = 25 ? c t j = 150 ? c 3500 fig.2 maximum (limit) forward characteristics fig.3 maximum (limit) forward characteristics fig.5 transient forward voltage vs rate of rise of forward current fig.6 recovered charge
dsf8025se / dsf8025sg 5/8 www.dynexsemi.com 110100 rate of rise of reverse current di r /dt - (a/s) 100 10 1000 reverse recovery current, i rr - (a) conditions: t j = 150 ? c, v r = 100v a b c a: i f = 2000a b: i f = 1000a c: i f = 200a fig.7 typical reverse recovery current vs rate of fall of forward current fig.8 maximum (limit) transient thermal impedance - junction to case - (?c/w) 0.1 0.01 0.001 transient thermal impedance, z th(j-c) - ( ? c/w) 0.001 0.01 0.1 1.0 10 time - (s) anode side cooled double side cooled
dsf8025se / dsf8025sg 6/8 www.dynexsemi.com 2 holes 3.6 0.1 x 2.0 0.1 deep (one in each electrode) 15 14 cathode anode 25nom. 42max 25nom. nominal weight: 82g clamping force: 8kn 10% package maybe supplied with pins and/or tags. package outline type code: e package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated o therwise. do not scale. fig. 9 package details - e
dsf8025se / dsf8025sg 7/8 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated o therwise. do not scale. hole 3.6 x 2.0 deep (in both electrodes) 34 nom 27.0 25.4 cathode anode 34 nom 58.5 max nominal weight: 250g clamping force: 12kn 10% package outine type code: g fig. 10 package details - g
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 ? dynex semiconductor 2003 technical documentation ? not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com stresses above those listed in this data sheet may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed.
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